In situ device processing using shadow mask selective area epitaxy and in situ metallization

A concept for in situ device processing has been demonstrated by the fabric ation of Au/CdTe device like structures using shadow mask selective area ep itaxy (SAE) and in situ metallization. Patterned CdTe epilayers were grown in the molecular beam epitaxy (MBE) chamber using shadow mask SAE (in situ patterning) and then directly transferred within ultrahigh vacuum (UHV) int o a metal evaporation chamber for patterned Au deposition (in situ metalliz ation). Excellent pattern definitions of both the CdTe and Au layers were o btained. Good metal adhesion properties and low levels of contamination at the metal-semiconductor interface were observed. A specially designed mask fixture that allows the mask to be placed and removed within the UHV chambe r was implemented to perform this work.