Laser pattern-write crystallization of amorphous SiC alloys

The aim of this work to investigate the cw-laser crystallization of amorpho us a-Si1-xCx alloys as a function of laser power and alloy composition. As the microRaman analysis reveals, many cases occur: in a silicon rich alloy (x approximate to 0.3) we can obtain two crystalline phases, i.e. polycryst alline Si or polycrystalline C, depending on the laser energy density irrad iated on the film. The presence of polycrystalline SiC is observed only in quasi-stoichiometric alloy (x approximate to 0.48) in the cubic beta-SiC ph ase. The experiment has been performed with a laser pattern-writing system that permits simultaneous control of annealing energy and focused spot size . PC control allows several patterns to be traced on the same film.