Oxygen-related deep levels in Al0.5In0.5P grown by MOVPE

Oxygen related defects in Al-containing materials have been determined to d egrade luminescence efficiency and reduce carrier lifetime and affect the p erformance of light emitting diodes and laser diodes utilizing these materi als. We have used the;metal-organic source diethylaluminum ethoxide (DEAlO) to intentionally incorporate oxygen-related defects during growth of Al0.5 In0.5P by metal-organic vapor phase epitaxy (MOVPE). The incorporated oxyge n forms several energy levels in the bandgap with energies of 0.62 eV to 0. 89 eV below the conduction band detected using deep level transient spectro scopy. Secondary ion mass spectroscopy measurements of the total oxygen con centration in the layers shows a direct correlation to the measured trap co ncentrations. Several other energy levels are detected that are not correla ted with the oxygen content of the film. The possible origin of these addit ional levels is discussed.