Die bonding with Au/In isothermal solidification technique

A gold-indium isothermal solidification technique has been developed for di e bonding. Both silicon on silicon and silicon on alloy 42 (chip size 2 x 2 mm(2)) are investigated. For silicon on silicon, the bonding is performed at 200 degrees C within 30 sec. The bonds can withstand 1,500 cycles of tem perature cycle between -65 degrees C and 150 degrees C without any degradat ion. For silicon on alloy 42, the bonding is done at 250 degrees C within 5 sec. The bonds can pass the shear strength test specified by MIL STD 883D, Method 2019.5. The reliability of the bonds is evaluated by thermal cycle testing. After 500 cycles between -65 degrees C and 150 degrees C, only sli ght degradation was observed.