Piezoelectric polarization in the radiative centers of GaInN/GaN quantum wells and devices

We identify, quantify, and correlate the polarization dipole across the wel l of device-typical piezoelectric GaInN/GaN heterostructures with the lumin escence properties of the well. This quantity reflects in the asymmetry of the barrier height on either side of the well. By a detailed comparison of photoreflection, electroreflection, low and high excitation density photolu minescence we find that a very similar splitting occurs in the emission cha racteristics of the well. We therefore conclude that the electronic band st ructure within the wells is also to a very large extent controlled by the q uantity of the polarization dipole in such polarization heterostructures.