A new type of asymmetrical GaAs/GaAlAs quantum well infrared photoconductor

A new type of mechanism of asymmetrical GaAs/GaAlAs quantum well infrared p hotoconductor was proposed based on the novel idea of the intersubband tran sition due to infrared radiation. The detectors with an area of 200 mu m X 200 mu m grown by MOCVD were fabricated. The peak of negative conductance a nd large infrared absorption were observed. It was found experimentally tha t the photocurrent signal and the signal-to-noise ratio of the detectors in crease with the number of the wells, and the noise of the detectors is one order of magnitude smaller than the conventional GaAs/GaAlAs multi-quantum well detectors.