Reactive magnetron sputtering of indium tin oxide films on acrylics - Electrical resistivity and optical properties

Citation
Jl. Huang et al., Reactive magnetron sputtering of indium tin oxide films on acrylics - Electrical resistivity and optical properties, J MAT ENG P, 9(4), 2000, pp. 424-427
Citations number
17
Categorie Soggetti
Material Science & Engineering
Journal title
JOURNAL OF MATERIALS ENGINEERING AND PERFORMANCE
ISSN journal
10599495 → ACNP
Volume
9
Issue
4
Year of publication
2000
Pages
424 - 427
Database
ISI
SICI code
1059-9495(200008)9:4<424:RMSOIT>2.0.ZU;2-Q
Abstract
The effects of processing parameters on the deposition rate lattice paramet ers, stoichiometric compositions, surface morphology, and bonding state of indium tin oxide (ITO) films on acrylics had been previously reported. This study was a continuation of the previous investigation and focused on the electrical resistivity and optical properties of ITO films. The electrical resistivity decreased and then increased with oxygen flow ra te. This was due to the effects of oxygen vacancies and impurity scattering . The resistivity of ITO films decreased with the applied bias voltage and film thickness. The transmittance of visible light increased with the oxyge n flow rate and decreased with film thickness. Films deposited at oxygen fl ow rates having low electrical resistivity also had higher infrared radiati on (IR) reflectance.