Europium silicate thin films on Si substrates fabricated by a radio frequency sputtering method

Europium silicate thin films have been fabricated on Si(100) substrates by a radio frequency magnetron sputtering method and characterized by x-ray ph otoelectron spectroscopy and x-ray diffraction spectroscopy. The constituen ts of the films, mixtures of europium silicates, silicon and europium oxide s, are sensitive to the stoichimetry of sputter targets, working gases and thermal annealing conditions. Electroluminescent devices based on the europ ium silicate thin films exhibit large-area uniform broad-band electrolumine scence with an external quantum efficiency of about 0.1% at room temperatur e and a low operating threshold voltage (about 6 V).