Mechanisms of the current modulation due to the gate bias in charge-density
-wave field-effect-transistors (CDW FETs) with a NbSe3 channel were investi
gated. It was clarified that the CDW dislocations do not modulate the CDW c
urrent and that the current is modulated under the gate electrode. The curr
ent modulation in the high-temperature CDW phase of NbSe3 also was observed
, for the first time.