Current modulation of charge-density-wave field-effect transistors with NbSe3 channel

Mechanisms of the current modulation due to the gate bias in charge-density -wave field-effect-transistors (CDW FETs) with a NbSe3 channel were investi gated. It was clarified that the CDW dislocations do not modulate the CDW c urrent and that the current is modulated under the gate electrode. The curr ent modulation in the high-temperature CDW phase of NbSe3 also was observed , for the first time.