Macropores in silicon: Toward three-dimensional photonic band-gap structures

Citation
Vv. Aristov et al., Macropores in silicon: Toward three-dimensional photonic band-gap structures, LASER PHYS, 10(4), 2000, pp. 946-951
Citations number
34
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Optics & Acoustics
Journal title
LASER PHYSICS
ISSN journal
1054660X → ACNP
Volume
10
Issue
4
Year of publication
2000
Pages
946 - 951
Database
ISI
SICI code
1054-660X(200007/08)10:4<946:MISTTP>2.0.ZU;2-1
Abstract
A finite-difference time-domain technique is used to analyze the distributi on of the light field in photonic band-gap structures with a defect of the photonic-crystal lattice and the spectrum of defect modes in photonic band gaps for macroporous-silicon photonic crystals. A method for fabricating th ree-dimensional spatially periodic macroporous-silicon structures based on the technology of deep photoanodic etching with a periodically modulated et ching photocurrent is developed and experimentally demonstrated. A procedur e for the creation of three-dimensionally periodic inverse-opal structures through the thermal oxidation of the fabricated macroporous-silicon preform s is discussed. Applications of silicon photonic-crystal structures in high -resolution microscopy, waveguide optics, local photoexcitation, and nonlin ear optics are considered.