The reliability of press-packed insulated gate bipolar transistors (IGBTs)
depends on satisfactory contact conditions applied at assembly stage and ma
intained throughout the service life. The objective of this work is the sim
ulation of stresses and strains in press-packed IGBTs due to assembly and t
hermal cycling. Single-chip as well as multi-chip devices were analyzed wit
h 2D and 3D models including an elastic-plastic material description and th
e contact between components using the ABAQUS code. The assembly process wa
s initially modeled and the factors affecting the contact pressure uniformi
ty between contact disks and chip discussed. The thermal cycling associated
with accelerated stress test was then introduced to examine contact pressu
re evolution as well as local stress/strain concentrations and stick/slip c
onditions. The device sensitivity to potential damage initiation due to the
rmo-mechanical fatigue and/or fretting is addressed. (C) 2000 Elsevier Scie
nce Ltd. All rights reserved.