A quasianalytical model for LT-GaAs and LT-Al0.3Ga0.7As MISFET devices

This paper describes a quasianalytical model for the calculation of the cur rent-voltage characteristics of LT-GaAs and LT-Al0.3Ga0.7As MISFET devices. The model is derived from basic semiconductor charge analysis. Poisson's e quation, the cull ent continuity equation, and the Chang-Fetterman velocity -field equations have been solved analytically. When the devices are operat ing in the linear region and the knee region, the one-dimensional Poisson e quation is considered. When the devices are in the saturation regime, the t wo-dimensional Poisson equation is solved analytically. The resulting outpu t current-voltage characteristics are in good agreement with experimental d ata. This model has been used to predict the RF performance and RF power ca pability of these MISFETs. (C) 2000 John Wiley & Sons, Inc.