Effects of indium concentration on the electronic structures of Be accepters confined in InxGa1-xAs/Al0.3Ga0.7As quantum-well structures

Electronic structures of accepters confined at the center of InxGa1-xAs/Al0 .3Ga0.7As quantum wells are studied experimentally and theoretically. The a im of this investigation is to explore the effects of biaxial deformation p otential on accepters confined in quantum-well structures. Satellite peaks related to 2S and 2P of the confined accepters have been observed in select ive photoluminescence spectra. The deduced energy separations between the a cceptor heavy holelike ground-state and different excited-states are compar ed with the theoretical calculated results. The impurity ground-state and d ifferent excited-states are compared with the theoretical calculated result s. The impurity states are calculated using a four-band effective-mass theo ry, in which the valence-band mixing as well as the mismatch of the band pa rameters and the dielectric constants between well and barrier materials ha ve been taken into account. An excellent agreement between experimental and theoretical data was found.