Spectroscopy of pi bonding in hard graphitic carbon nitride films: Superstructure of basal planes and hardening mechanisms

Citation
I. Jimenez et al., Spectroscopy of pi bonding in hard graphitic carbon nitride films: Superstructure of basal planes and hardening mechanisms, PHYS REV B, 62(7), 2000, pp. 4261-4264
Citations number
28
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
62
Issue
7
Year of publication
2000
Pages
4261 - 4264
Database
ISI
SICI code
0163-1829(20000815)62:7<4261:SOPBIH>2.0.ZU;2-5
Abstract
X-ray-absorption near-edge spectroscopy (XANES or NEXAFS) has been used to obtain information on the orientation, corrugation, and cross-linking of gr aphitic carbon nitride planes, structural parameters that determine the mec hanical properties of the material. The contribution of p electrons from ca rbon and nitrogen atoms to rr bonding in graphitic carbon nitride has been studied with elemental and angular sensitivity by XANES. The density of pi* states from nitrogen is composition dependent and presents angular anisotr opy, while the density of pi* states from carbon is isotropic and independe nt of composition. Both observations are consistent with a model of The sup erstructure of basal planes.