Band-offset determination and excitons in SiGe/Si(001) quantum wells

Authors
Cheng, HH Yen, ST Nicholas, RJ
Citation
Hh. Cheng et al., Band-offset determination and excitons in SiGe/Si(001) quantum wells, PHYS REV B, 62(7), 2000, pp. 4638-4641
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
62
Issue
7
Year of publication
2000
Pages
4638 - 4641
Database
ISI
SICI code
0163-1829(20000815)62:7<4638:BDAEIS>2.0.ZU;2-Q
Abstract
We report both experimental and theoretical studies on Si1-xGex/Si multiple quantum wells. A self-consistent calculation is employed to model the exci tonic transition. It shows that, in the large conduction-band-offset region the Delta(2)-heavy-hole (hh) exciton is the lowest transition, while in th e small-offset region the Delta(4)-hh exciton is the lower. From an analysi s of the data, a type-II conduction-band-offset ratio of 30+/-3% is conclud ed.