Optical evidence of polaron interaction in InAs/GaAs quantum dots

Citation
M. Bissiri et al., Optical evidence of polaron interaction in InAs/GaAs quantum dots, PHYS REV B, 62(7), 2000, pp. 4642-4646
Citations number
25
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
62
Issue
7
Year of publication
2000
Pages
4642 - 4646
Database
ISI
SICI code
0163-1829(20000815)62:7<4642:OEOPII>2.0.ZU;2-X
Abstract
Photoluminescence (PL) and resonant PL (RPL) have been Performed at low tem peratures in a number of InAs/GaAs quantum dots (QD's) whose emission energ ies range from 1.4 to 1.08 eV. A simple, standard electron-phonon interacti on model reproduces PL and RPL spectra well. The value of the electron-phon on interaction S is large for small QD's and evolves to small values for la rge, well-formed QD's. This trend is consistent with recent experimental re sults in InAs QD's and provides an experimental basis to recent theoretical speculations.