Surface roughness and surface-induced resistivity of gold films on mica: Application of quantitative scanning tunneling microscopy

Citation
Rc. Munoz et al., Surface roughness and surface-induced resistivity of gold films on mica: Application of quantitative scanning tunneling microscopy, PHYS REV B, 62(7), 2000, pp. 4686-4697
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
62
Issue
7
Year of publication
2000
Pages
4686 - 4697
Database
ISI
SICI code
0163-1829(20000815)62:7<4686:SRASRO>2.0.ZU;2-Q
Abstract
We report measurements of the resistivity rho(T) of a gold film 70 nm thick deposited on mica preheated to 300 degrees C in UHV, performed between 4 a nd 300 K, and measurements of the surface topography of the same film perfo rmed with a scanning tunneling microscope (STM). From the roughness measure d with the STM we determine the parameters delta (rms amplitude) and xi (la teral correlation length) corresponding to a Gaussian representation of the average height-height autocorrelation function (ACF). We use the parameter s delta and xi to calculate the quantum reflectivity R and the increase in resistivity induced by electron-surface scattering on this film, according to a modified version of the theory of Sheng, Xing, and Wang (mSXW) [Munoz Et al., J. Phys.: Condens. Matter 11, L299 (1999)]. The mSXW theory is able to select the appropriate scale of distance over which corrugations take p lace, leading to R approximate to 1 for corrugations taking place over scal es of distances that are long when compared to a few Fermi wavelength lambd a(F) and R<1 for corrugations taking place over scales of distances that ar e comparable to lambda(F) (to within an order of magnitude). The reflectivi ty R determined by corrugations ocurring over a scale of distances comparab le to lambda(F) approaches zero for a certain angle. The resistivity rho(T) of the film increases by roughly a factor of 4 between 4 and 300 K, and so does the bulk resistivity po(T) predicted by mSXW theory. With the paramet ers delta and xi measured on our 70-nm film, we reproduced approximately th e thickness and temperature dependence of the resistivity (between 3 and 30 0 K) of several gold films on mica reported by Sambles, Elsom, and Jarvis [ Philos. Trans. R. Sec. London, Ser. A 304, 365 (1982)], without using any a dustable parameters. The results of this paper suggest that the relevant qu antities controlling electron-surface scattering in continuous gold films o f arbitrary thickness, are the parameters delta and xi describing the avera ge ACF that characterizes the surface of the sample on a nanoscopic scale, in agreement with the accepted view regarding the conductivity of ultrathin films.