Structural defects in 6H-SiC substrates and their effect on the sublimation growth of epitaxial layers in vacuum

The structural perfection of silicon carbide substrates and homoepitaxial l ayers grown on the substrates by sublimation has been studied by x-ray diff raction (topography and diffractometry) and optical microscopy. The optimum diffraction conditions (hkil reflections, radiation wavelength lambda, and recording geometry) for revealing "micropipes" of the dislocation nature a re determined. It is shown that the growth conditions used make it possible to obtain highly perfect epitaxial layers. (C) 2000 MAIK "Nauka/Interperio dica".