AN IMPROVED C-INFINITY-CONTINUOUS SMALL-GEOMETRY MOSFET MODELING FOR ANALOG APPLICATIONS

The purpose of this work is to present a new MOSFET model suitable for circuit simulation and valid from the deep-submicron range to long-ch annel devices. This model is derived from the physics of the device, b ut explicit expressions are finally obtained by making some reasonable approximations, and they are valid and continuous through all operati ng regimes. The suitability of the new model for analog applications i s due to the use of explicit expressions with an infinite order of con tinuity. This implies the use of smoothening functions requiring a lar ger computation time than simpler functions used by the piecewise mode ls currently available in circuit simulators. Nevertheless, this incre ase in complexity is compensated with an improvement in the convergenc e when employed in circuit simulation and with a better accuracy of th e transistor currents and charges (especially of their derivatives, th e conductances and the capacitances, respectively). Furthermore, the u se of physically-based expressions makes the model more suitable to be extended in the deep-submicron range and eases parameter extraction.