Plasmochemical deposition of chromium-doped silicon dioxide from heptamethylchlorocyclotetrasiloxane

Authors
Martynova, TN Voronkov, MG
Citation
Tn. Martynova et Mg. Voronkov, Plasmochemical deposition of chromium-doped silicon dioxide from heptamethylchlorocyclotetrasiloxane, RUS J AP CH, 73(5), 2000, pp. 851-853
Citations number
5
Categorie Soggetti
Chemistry
Journal title
RUSSIAN JOURNAL OF APPLIED CHEMISTRY
ISSN journal
10704272 → ACNP
Volume
73
Issue
5
Year of publication
2000
Pages
851 - 853
Database
ISI
SICI code
1070-4272(200005)73:5<851:PDOCSD>2.0.ZU;2-I
Abstract
Deposition of thin silicon dioxide films on silicon matrices by decompositi on of heptamethylchlorocyclotetrasiloxane in a high-frequency discharge pla sma was studied. The permittivity, density of the surface states, and incor porated charge of the films were determined as influenced by the deposition conditions. The dependence of the refractive index and the etching rate of the films on the gas phase composition was also determined.