Temperature coefficient of the space-charge scattering mobility dependent on the Ge doping concentration in In0.5Ga0.5P epilayers grown on GaAs (100)substrates

Temperature-dependent mobilities of Ge-doped In0.5Ga0.5P epilayers grown on (100) semi-insulating GaAs substrates by using liquid-phase epitaxy have b een investigated in the temperature range between 77 and 300 K. The space-c harge scattering mobility for the n-type In0.5Ga0.5P epilayer has a tempera ture dependence of T-0.25 to T-1.4, and that for the p-type In0.5Ga0.5P epi layer has a temperature dependence of T-0.5 to T-0.9. This result indicates that the temperature coefficient of the space-charge scattering mobility i s dramatically dependent on the Ge doping concentration in the In0.5Ga0.5P epilayers. (C) 2000 Elsevier Science Ltd. All rights reserved.