Spectroscopic ellipsometry study of SiC/Si heterostructures formed by high-dose C+ implantation into silicon

SiC/Si heterostructures formed by C+ implantation into Si with different im plant energy (35 and 65 keV) were studied by spectroscopic ellipsometry (SE ) and cross-section transmission electron microscopy (XTEM). The measured S E spectra (2.3-5.0 eV) were analyzed with appropriate multi-layer models an d the Bruggeman effective medium approximation (B-EMA). The results showed that the measured spectra could be well simulated by using a multi-layer st ructure model. The thickness and composition of the layers were determined. Optical constants (n and k values) of the buried beta-SiC formed by ion be am synthesis in photon energy of 2.3-5.0 eV were first obtained by SE calcu lation. (C) 2000 Elsevier Science Ltd. All rights reserved.