Effect of hydrogen ion implantation on the physical properties of SiO2/Si system

The influence of the hydrogen ion implantation on the optical parameters of the SiO2/Si system in relation to results from electrical characterization is investigated. Theoretical ellipsometric modeling shows that separate sp ectral regions and proper angles of incidence can be found, where the optic al parameters of the oxide, interface as well as the Si substrate can be st udied without high correlation of the respective parameters. From multiple- angle ellipsometric measurements it is established that the introduction of hydrogen increases the refractive index and the extinction coefficient of the Si substrate. This result is linked with the observed increase of the s ubstrate doping level. The increased refractive index of the oxide upon imp lantation, and consequently, the mechanical stress, are correlated with ele ctrically active radiation defects in the interface region. (C) 2000 Elsevi er Science Ltd. All rights reserved.