Properties of silicon films grown by laser-assisted deposition

Authors
Daraktchieva, V Baleva, M Mateeva, E Surtchev, M
Citation
V. Daraktchieva et al., Properties of silicon films grown by laser-assisted deposition, VACUUM, 58(2-3), 2000, pp. 369-373
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
VACUUM
ISSN journal
0042207X → ACNP
Volume
58
Issue
2-3
Year of publication
2000
Pages
369 - 373
Database
ISI
SICI code
0042-207X(200008/09)58:2-3<369:POSFGB>2.0.ZU;2-1
Abstract
Structural investigations of Si films prepared by laser-assisted deposition indicate that the strong visible photoluminescence can be related to the p resence of crystalline cubic Si (c-Si) inclusions in an amorphous media wit h smooth surface morphology. The PL characteristics are determined by the s pecific short-range arrangement of Si atoms in the amorphous media and by t he size and the density of the embedded c-Si crystallites. (C) 2000 Elsevie r Science Ltd. All rights reserved.