Ri. Tomov et al., LiNbO3 optical waveguides deposited on sapphire by electric-field-assistedpulsed laser deposition, VACUUM, 58(2-3), 2000, pp. 396-403
Oriented LiNbO3 films have been grown on sapphire (1 1 0 2) substrates by l
ow electric-field-assisted pulsed laser deposition. KrF excimer laser (248
nm) has been utilized for the ablation of monocrystalline stoichiometric ta
rget. The deposition was performed at all substrate temperatures in the ran
ge of 550-800 degrees C in an oxygen atmosphere. The ablation threshold of
2.5 J/cm(2) for the monocrystalline target was determined from the experime
ntal results presenting ablation rate vs. laser fluence dependence. Electro
-optical properties of these films appeared to be strongly dependent on the
process parameters (substrate temperature, oxygen partial pressure, electr
ic held), demonstrating the importance of the epitaxial growth control duri
ng the deposition. The films structure and morphology were characterized by
XRD and AFM, respectively. The waveguide properties of the films were stud
ied experimentally. (C) 2000 Elsevier Science Ltd. All rights reserved.