LiNbO3 optical waveguides deposited on sapphire by electric-field-assistedpulsed laser deposition

Citation
Ri. Tomov et al., LiNbO3 optical waveguides deposited on sapphire by electric-field-assistedpulsed laser deposition, VACUUM, 58(2-3), 2000, pp. 396-403
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
VACUUM
ISSN journal
0042207X → ACNP
Volume
58
Issue
2-3
Year of publication
2000
Pages
396 - 403
Database
ISI
SICI code
0042-207X(200008/09)58:2-3<396:LOWDOS>2.0.ZU;2-G
Abstract
Oriented LiNbO3 films have been grown on sapphire (1 1 0 2) substrates by l ow electric-field-assisted pulsed laser deposition. KrF excimer laser (248 nm) has been utilized for the ablation of monocrystalline stoichiometric ta rget. The deposition was performed at all substrate temperatures in the ran ge of 550-800 degrees C in an oxygen atmosphere. The ablation threshold of 2.5 J/cm(2) for the monocrystalline target was determined from the experime ntal results presenting ablation rate vs. laser fluence dependence. Electro -optical properties of these films appeared to be strongly dependent on the process parameters (substrate temperature, oxygen partial pressure, electr ic held), demonstrating the importance of the epitaxial growth control duri ng the deposition. The films structure and morphology were characterized by XRD and AFM, respectively. The waveguide properties of the films were stud ied experimentally. (C) 2000 Elsevier Science Ltd. All rights reserved.