Ion beam synthesis of beta-FeSi2

Authors
Daraktchieva, V Baleva, M Goranova, E Angelov, C
Citation
V. Daraktchieva et al., Ion beam synthesis of beta-FeSi2, VACUUM, 58(2-3), 2000, pp. 415-419
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
VACUUM
ISSN journal
0042207X → ACNP
Volume
58
Issue
2-3
Year of publication
2000
Pages
415 - 419
Database
ISI
SICI code
0042-207X(200008/09)58:2-3<415:IBSOB>2.0.ZU;2-D
Abstract
The beta-FeSi2 phase was fabricated using ion beam synthesis with high dose s of implantation followed by rapid thermal annealing. A direct band gap wi th an energy E-g = 0.85 eV was determined from the transmittance and reflec tance spectra of implanted Si wafers accounting for the Burstein-Moss effec t. (C) 2000 Elsevier Science Ltd. All rights reserved.