Ga+ ion irradiated a-As2S3 layers

The ion-induced structural changes in evaporated layers of a-As2S3 under th e action of Ga+ ions with energy 19 keV and doses between 10(12) and 10(15) ions cm(-2) are studied. It is shown that the solubility of the evaporated layers of As2S3 increases under Ga+ ion irradiation at a dose up to 10(14) ions/cm(2) and decreases at a dose of more than 10(14) ions/cm(2). It is f ound that the ion-induced changes in the solubility of the layers occur at a depth greater than the penetration range calculated by the TRIM code of t he Ga+ ions. It is found that the effect of Ga+ ions irradiation on As2S3 l ayers is similar to that observed with Au+ ions. The ion-induced changes in the solubility of As2S3 layers irradiated with Au+, Ga+ (19 keV) and Au+, Pd+ (500 keV) are followed, It is established that the mass and the energy of the ions are a predominant factor for ion-induced phenomena. The results obtained provide the data for understanding ion-induced phenomena in evapo rated layers of chalcogenide glasses. The results are promising for nanotec hnologies, nonconventional optics, etc. (C) 2000 Elsevier Science Ltd. All rights reserved.