Effects of the annealing atmosphere on the electrical properties of low-power pulsed-laser annealed Zn-implanted InP

The effects of N-2 annealing atmosphere on implanted and low-power pulsed-l aser annealed (LPPLA) InP matrix are discussed. The analyses were performed , by using several complementary techniques such as RES, Raman spectroscopy , SIMS and electrical measurements. It has been demonstrated that in suitab le annealing conditions, namely nitrogen ambient, it is possible to achieve a complete reordering of the damaged structure and a very high electrical carrier activation ( similar to 80%). In this paper, the contribution of th e nitrogen atoms to the mechanism affecting the electrical characteristic o f the implanted and laser annealed samples is discussed. (C) 2000 Elsevier Science Ltd. All rights reserved.