Binding energy of a bound polaron in a quantum well wire

Theoretical study of the binding energies of an off-center donor hydrogenic impurity in a cylindrical quantum well wires semiconductor is presented. C alculations are performed in the framework of the effective mass approximat ion using the variational approach. We describe the effect of the quantum c onfinement by an infinitely deep potential well and we take into considerat ion the interaction between the charge carrier (electron and ion) and the o ptical phonons (confined longitudinal optical and surface optical). Our res ults show that the impurity binding energy depends strongly on the spatial confinement, the impurity position and the polaronic corrections.