Layer-by-layer growth of GaN induced by silicon

Authors
Munkholm, A Thompson, C Murty, MVR Eastman, JA Auciello, O Stephenson, GB Fini, P DenBaars, SP Speck, JS
Citation
A. Munkholm et al., Layer-by-layer growth of GaN induced by silicon, APPL PHYS L, 77(11), 2000, pp. 1626-1628
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
11
Year of publication
2000
Pages
1626 - 1628
Database
ISI
SICI code
0003-6951(20000911)77:11<1626:LGOGIB>2.0.ZU;2-T
Abstract
We present in situ x-ray scattering studies of surface morphology evolution during metal-organic chemical vapor deposition of GaN. Dosing the GaN(0001 ) surface with Si is shown to change the growth mode from step-flow to laye r-by-layer over a wide temperature range. Annealing of highly doped layers causes Si to segregate to the surface, which also induces layer-by-layer gr owth. (C) 2000 American Institute of Physics. [S0003-6951(00)02637-1].