Controlled oxide removal for the preparation of damage-free InAs(110) surfaces

Controlled oxide removal from InAs(110) surfaces using atomic hydrogen (H*) has been achieved by monitoring the contaminant vibrational modes with hig h resolution electron energy loss spectroscopy (HREELS). The contributing o xide vibrational modes of the partially H-* cleaned surface have been ident ified. Following hydrocarbon desorption during preliminary annealing at 360 degrees C, exposure to atomic hydrogen at 400 degrees C initially removes the arsenic oxides and indium suboxides; complete indium oxide removal requ ires significantly higher hydrogen doses. After a total molecular hydrogen dose of 120 kL, a clean, ordered surface, exhibiting a sharp (1x1) pattern, was confirmed by low energy electron diffraction and x-ray photoelectron s pectroscopy. Energy dependent HREELS studies of the near-surface electronic structure indicate that no residual electronic damage or dopant passivatio n results from the cleaning process. (C) 2000 American Institute of Physics . [S0003-6951(00)05537-6].