Ultrathin zirconium silicate film with good thermal stability for alternative gate dielectric application

Authors
Qi, WJ Nieh, R Dharmarajan, E Lee, BH Jeon, Y Kang, LG Onishi, K Lee, JC
Citation
Wj. Qi et al., Ultrathin zirconium silicate film with good thermal stability for alternative gate dielectric application, APPL PHYS L, 77(11), 2000, pp. 1704-1706
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
11
Year of publication
2000
Pages
1704 - 1706
Database
ISI
SICI code
0003-6951(20000911)77:11<1704:UZSFWG>2.0.ZU;2-E
Abstract
Zirconium silicate (ZrSixOy) films have been sputtered by comagnetron-react ive sputtering. The composition of ZrSixOy has been controlled by adjusting the sputtering powers of Si and Zr targets to achieve various effective di electric constants. The sputtered silicate layers showed low equivalent oxi de thickness of 14.5 Angstrom with a low leakage of 3.3x10(-3) A/cm(2) at - 1.5 V relative to flat band voltage. The silicate films also exhibited good high-temperature stability and smooth interfacial properties on silicon su bstrate. (C) 2000 American Institute of Physics. [S0003-6951(00)01337-1].