Piezoelectric properties and poling effect of Pb(Zr, Ti)O-3 thick films prepared for microactuators by aerosol deposition

Citation
J. Akedo et M. Lebedev, Piezoelectric properties and poling effect of Pb(Zr, Ti)O-3 thick films prepared for microactuators by aerosol deposition, APPL PHYS L, 77(11), 2000, pp. 1710-1712
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
11
Year of publication
2000
Pages
1710 - 1712
Database
ISI
SICI code
0003-6951(20000911)77:11<1710:PPAPEO>2.0.ZU;2-W
Abstract
Crack-free [Pb(Zr-0.52, Ti-0.48)O-3] (PZT) films with more than 10 mu m thi ckness as the piezoelectric material, were formed on stainless-steel (SUS30 4) and Pt/Ti/SiO2/Si substrates by aerosol deposition and then annealed at 600 degrees C in air. The deposition rate was 20 mu m/min in an area of 5x5 mm(2). To estimate the piezoelectric and mechanical properties of PZT film s, a unimorph structured PZT and a free-standing cantilever were fabricated . The Young's modulus (Y-11) of the PZT film was 80 GPa. Poling at 40 kV/cm , 250 degrees C for 20 min increased the properties by a factor of 4.0-5.5, resulting in the piezoelectric coefficient (-d(31)) varying from 80 to 180 pm/V. (C) 2000 American Institute of Physics. [S0003- 6951(00)03237-X].