MEASUREMENT OF ENHANCED RADIANT POWER OF INTERNAL 2ND-HARMONIC GENERATION IN INGAAS GAAS/ALGAAS STRAINED SQW BH LDS, BY AN INDIRECT METHOD/

Authors
ISPASOIU RG PUSCAS NN POPESCU IM YAKOVLEV VP SMEU E TOMA A
Citation
Rg. Ispasoiu et al., MEASUREMENT OF ENHANCED RADIANT POWER OF INTERNAL 2ND-HARMONIC GENERATION IN INGAAS GAAS/ALGAAS STRAINED SQW BH LDS, BY AN INDIRECT METHOD/, International journal of optoelectronics, 11(2), 1997, pp. 127-131
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic",Optics
Journal title
International journal of optoelectronics → ACNP
ISSN journal
09525432
Volume
11
Issue
2
Year of publication
1997
Pages
127 - 131
Database
ISI
SICI code
0952-5432(1997)11:2<127:MOERPO>2.0.ZU;2-3
Abstract
For the evaluation of internal second harmonic generation (ISHG) radia nt power from InGaAs/GaAs/AlGaAs strained single quantum well buried h eterostructure laser diodes (SQW BH LDs), we used a simple indirect me thod based on photomultiplier response calibration with the aid of an Ar+ laser tuned close enough to the ISHG wavelength. The observation o f ISHG emission at similar to 476 nm, with radiant power of a few nano watts, can ease the way for increased detection efficiency and higher resolution in the near-field optical microscopy of the laser diode mir ror facet.