Measurement of field emission from nitrogen-doped diamond films

This study explores issues related to the measurement of the field emission properties of nitrogen-doped diamond grown by microwave plasma chemical va por deposition (CVD). Growth conditions have been optimized to produce film s with a low concentration of sp(2)-bonded carbon which results in high ele ctrical resistance. Field emission characteristics were measured in an ultr ahigh vacuum with a variable distance anode technique. For samples grown wi th gas phase [N]/[C] ratios less than 10, damage from micro-arcs occurred d uring the field emission measurements. Samples grown at higher [N]/[C] cont ent could be measured prior to an arcing event. The occurrence of a micro-a re is related to the film properties. The measurements indicate relatively high threshold fields (> 100 V mu m(-1)) for electron emission. (C) 2000 El sevier Science S.A. All rights reserved.