Electrical properties of chemical vapor deposition diamond films and electrical response to X-ray

Citation
Lj. Wang et al., Electrical properties of chemical vapor deposition diamond films and electrical response to X-ray, DIAM RELAT, 9(9-10), 2000, pp. 1617-1620
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
09259635 → ACNP
Volume
9
Issue
9-10
Year of publication
2000
Pages
1617 - 1620
Database
ISI
SICI code
0925-9635(200009/10)9:9-10<1617:EPOCVD>2.0.ZU;2-M
Abstract
In this paper, dark current-voltage (I-V) characteristics, current-temperat ure (I-T) characteristics, and photocurrents under steady-state X-ray excit ation of CVD diamond films were investigated. Results indicated that dark c urrents and photocurrents by X-ray irradiation for the [001] textured CVD d iamond film were greater than those for the non-textured one. The differenc es in dark currents and resistivities were attributed to a large number of grain boundaries contained in the non-textured diamond films. From the I-T curves, at the temperature higher than 500 K, currents clearly followed an exponential behavior because of the activation energy of E-a = 1.68 eV whic h was normally attributed to Si trapped to a vacancy in the diamond lattice . (C) 2000 Elsevier Science S.A. All rights reserved.