Microwave CVD heteroepitaxial diamond film on a 4 degrees off-axis Si(100)
substrate is obtained by two stages. The first one is to grow oriented 3c-S
iC layers on Si(100) using a non-toxic and non-inflammable (CH3)(6)Si2NH or
ganic compound carried by hydrogen. The following stage is to grow oriented
diamond films on them under the atmosphere of CH4 and H-2. In each stage t
here are bias and growth processions. The micro-Raman and micro-Auger analy
ses prove that there is a perfect orientation relationship between the film
and substrate as following: diamond < 001 >//3c-SiC < 001 >//Si < 001 >. T
he Hall effect indicates that the film is a P type, whose resistivity is 9.
4 x 10(-3) Omega cm, the Hall coefficient is 2.9 cm(3)/Q, the hole mobility
is 309 cm(2)/V s and the carrier concentration reaches 2.2 x 10(18) cm(-3)
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