Micro-Raman scattering and photoluminescence study of boron-doped diamond films

Micro-Raman scattering and photoluminescence spectra are implemented to inv estigate the characteristics of heavily boron-doped polycrystalline and hom oepitaxial diamond films. Large differences on peak position and peak shape are observed between different growth sectors, the shift of the one-phonon diamond Raman peak is the largest in homoepitaxial (111) growth sector. Th ese differences are due to different boron doping ratios in different growt h sectors, the (111) growth sector contains more boron than the (100) growt h sector. Fano-type interference appears in all spectra, the interference i ntensity increases with the increase of boron incorporation density. Upon b oron doping, some luminescence emission bands due to nitrogen and silicon a re quenched, the reason for this phenomena is the dramatic reduction of vac ancies upon the incorporation of boron accepters. (C) 2000 Elsevier Science S.A. All rights reserved.