Growth, doping and applications of cubic boron nitride thin films

This article reviews the growth techniques and growth parameters for the fo rmation of cubic boron nitride (c-BN) thin films. It is generally accepted that the impact of energetic ions or neutral atoms is crucial to achieve c- BN film growth. Furthermore, c-BN nucleation is only observed within certai n thresholds for the deposition parameters, including the substrate tempera ture. However, the temperature threshold exists only for the nucleation and not for the growth of c-BN. We will show that three independent characteri zation methods are necessary for the non-ambiguous identification of the c- BN phase within BN films. The cylindrical thermal spike model developed to describe the formation of diamond-like phases by ion deposition can be used to explain the c-BN nucleation and growth. A short introduction and the ba sic ideas of this model will be given. Finally, possible tribological appli cations of c-BN films and the doping of c-BN films will be discussed. (C) 2 000 Elsevier Science S.A. All rights reserved.