Codoping studies of physical vapor phase deposition of SrS : Cu

Citation
W. Tong et al., Codoping studies of physical vapor phase deposition of SrS : Cu, DISPLAYS, 21(2-3), 2000, pp. 83-87
Citations number
10
Categorie Soggetti
Computer Science & Engineering
Journal title
DISPLAYS
ISSN journal
01419382 → ACNP
Volume
21
Issue
2-3
Year of publication
2000
Pages
83 - 87
Database
ISI
SICI code
0141-9382(20000801)21:2-3<83:CSOPVP>2.0.ZU;2-P
Abstract
A series of charge compensation investigations on SrS:Cu grown by physical vapor phase are reported. In this study, the trivalent ion, Y, was codoped during SrS growth to substitute on the Sr-site. Although similar Fl, perfor mance to high temperature annealed sputtered samples was obtained using an annealing temperature of 650 degrees C, our results indicated that the ther mal quenching in this material could only be reduced by charge compensation codoping. Preliminary results show that at 300 K the brightness of SrS:Cu, Y was only 15% less than at 10 K. From temperature dependent FL, and high resolution PLE, the physical properties of the defect and the defect reduct ion mechanisms are determined. (C) 2000 Elsevier Science B.V. All rights re served.