AN ADVANCED GE PREAMORPHIZATION SALICIDE TECHNOLOGY FOR ULTRA-THIN-FILM SOI CMOS DEVICES

In this letter, we propose a new approach to implement salicide on thi n-film silicon-on-insulator (SOI) through the amorphization of the sou rce/drain (S/D) regions by a germanium implantation, The amorphous fil m greatly reduces the silicide formation energy and effectively contro ls the silicide depth. This results in a much lower thermal cycle and increased flexibility in the choice of metal thickness, SOI NMOS devic es fabricated using this novel salicide technology have shown substant ially reduced S/D resistance as well as good device performance, This technology is applicable to PMOS SOI MOSFET's as well.