A NEW DC DRAIN-CURRENT-CONDUCTANCE METHOD (DCCM) FOR THE CHARACTERIZATION OF EFFECTIVE MOBILTY (U(EFF)) AND SERIES RESISTANCES (R-S, R-D) OF FRESH AND HOT-CARRIER STRESSED GRADED JUNCTION MOSFETS

A simple new DC technique is developed to extract the gate bias depend ent effective channel mobility (mu(eff)) and series resistances (R-s a nd R-d) of graded junction n- and p-channel MOSFET's. This technique i s found to be accurate and effective for devices with differing channe l lengths and also for devices after nonuniform hot-carrier degradatio n. The parameter values extracted provide further insight into the dam age mechanisms of hot-carrier stressed graded junction nMOSFET's and a re usable in circuit and reliability simulation, This technique is esp ecially useful for the optimization of hot-carrier resistant structure s of submicrometer MOSFET's.