NITROGEN-DOPED POLY SPACER LOCAL OXIDATION

A novel isolation technique which consists of a modified local oxidati on of silicon (LOCOS) process with a nitrogen-doped amorphous-Si space r has been developed, Nitrogen doping of amorphous-Si reduces its oxid e growth rate, This isolation process shows the least encroachment, sm allest maximum stress, and a deeper field oxide recess as compared to standard LOCOS or poly spacer LOCOS, The oxidation of nitrogen-doped a morphous-Si also has been simulated by an equivalent stacked layer.