We describe a detailed numerical scheme to calculate electron transport in
quantum wires using the Green function formalism combined with tight-bindin
g orbital basis, As an example of the application, we study the electron tr
ansport in a Si nanowire containing a finite potential barrier. The effects
of nonzero bias, temperature, and disorder on the barrier-induced oscillat
ory conductance are investigated within the context of coherent transport m
odel The oscillatory behavior of the conductance as a function of the Fermi
energy is found to be highly sensitive to sample disorder and limited to a
very low temperature and a small bias range.