High breakdown GaNHEMT with overlapping gate structure

GaN high electron mobility transistors (HEMTs) were fabricated using an ove rlapping-gate technique in which the drain-side edge of the metal gate over laps on a high breakdown high dielectric constant dielectric. The overlappi ng structure reduces the electric field at the drain-side gate edge, thus c reasing the breakdown of the device. A record-high three-terminal breakdown figure of 570 V was achieved on a HEMT with a gate-drain spacing of 13 mu m. The source-drain saturation current Is 500 mA/mm and the extrinsic trans conductance 150 mS/mm.