An anomalous crossover in Vth roll-off for indium-doped nMOSFETs

The effects of indium channel implant energy on short-channel effect (SCE) and narrow channel effect (NCE) were studied on NMOS devices down to 0.1 mu m channel length. An anomalous crossover in Vth roll-off curves was observ ed, for the first time, on indium-implanted splits with different implant e nergies. This intriguing finding, together with the observed reduction in r everse narrow channel effect (RNCE) and effective channel length with reduc ing indium implant energy, can be consistently explained by the suppression of transient enhanced diffusion (TED) of channel impurity due to indium de activation.