Reduced reverse narrow channel effect in thin SOI nMOSFETs

The effects of narrow channel width on the threshold voltage of deep submic ron silicon-on-insulator (SOI) nMOSFETs with LOGOS isolation have been inve stigated. The reverse narrow channel effect (RNCE) in SOI devices is found to be dependent on the thickness of the active silicon film. A thinner sili con film is found to depict less threshold voltage fall-off. These results can be explained by a reduced oxide/silicon interface area in the transisto r width direction, thus the boron segregation due to silicon interstitials with high recombination rate is reduced.