High-Speed and low-noise avalanche photodiode operating at 1.06 mu m

Previously, it has been demonstrated that resonant-cavity-enhanced. quantum -dot avalanche photodiodes can achieve a good gain and high quantum efficie ncy at 1.06 mu m. In our new effort, these devices have shown RC-limited ba ndwidths of 35 GHz at Low gain and gain-bandwidth products as high as 220 G Hz, The achievable gain has been increased from similar to 18 to greater th an 50 while keeping the quantum efficiency high. These photodiodes also exh ibited low avalanche noise (k = 0.24), Low dark current (less than 100 nA a t 90% of the breakdown voltage), and low-breakdown voltage (similar to 17 V ).