The results of theoretical calculations for the ground state and low-lying
excited states of SiCu, SiAg, and SiAu, and their ions SiCu+, SiAg+, SiAuand SiCu-, SiAg-, SiAu- are presented. Calculations were carried out with h
igh-level correlated methods including relativistic corrections at the leve
l of the Douglas-Kroll approximation. The ground state data are compared wi
th the recent experimental findings and they differ in the assignment of th
e ground-state symmetry. All neutral silicides are predicted to have the el
ectronic ground state of (2)Pi symmetry, in agreement with earlier theoreti
cal data. The neutral species and both negative and positive ions of silici
des are found to be quite stable in the ground electronic state and in seve
ral low-lying excited states. The relativistic effects bring significant co
ntribution to the stabilization of the gold silicide and its ions in all el
ectronic states investigated in this paper. (C) 2000 American Institute of
Physics. [S0021-9606(00)30835-2].