Anticrossing effects in the design of MIR intersubband semiconductor lasers

Authors
Cheung, CYL Shore, KA Harrison, P
Citation
Cyl. Cheung et al., Anticrossing effects in the design of MIR intersubband semiconductor lasers, J MOD OPT, 47(11), 2000, pp. 1791-1801
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Optics & Acoustics
Journal title
JOURNAL OF MODERN OPTICS
ISSN journal
09500340 → ACNP
Volume
47
Issue
11
Year of publication
2000
Pages
1791 - 1801
Database
ISI
SICI code
0950-0340(200009)47:11<1791:AEITDO>2.0.ZU;2-H
Abstract
The effects of coupling and anticrossing in triple quantum well intersubban d semiconductor lasers due to changes in the well and barrier widths have b een studied. Very strong influences on the energy levels and state lifetime s of the structures are revealed when optical phonon scattering is not take n into account; the influences reduce with increasing optical phonon scatte ring rate.